Please use this identifier to cite or link to this item: http://hdl.handle.net/123456789/7382
Title: Influence of Al-flux on the growth of AlN/GaN/AlN films on Si (1 1 1) substrate by MBE
Authors: M.Z. Mohd Yusoff
Azzafeerah Mahyuddin
Z. Hassan
H. Abu Hassan
M.J. Abdullah
UniKL MIAT
Keywords: AlN
MBE
XRD
III-Nitride
Silicon
Issue Date: Dec-2013
Publisher: Elsevier
Citation: Mohd Yusoff, M. Z., Mahyuddin, A., Hassan, Z., Abu Hassan, H., & Abdullah, M. J. (2013). Influence of Al-flux on the growth of AlN/GaN/AlN films on Si (111) substrate by MBE. Superlattices and Microstructures, 64, 367–374. doi:10.1016/j.spmi.2013.10.016
Series/Report no.: Superlattices and Microstructures;
Abstract: The effect of the Al flux on the crystal quality of AlN/GaN/AlN heterostructures grown on Si (1 1 1) substrates by solid source molecular beam epitaxy, using a 13.56 MHz RF nitrogen source, was investigated. The thickness of 69.94 nm is obtained for good growth conditions giving the comparable FWHM of the XRD-rocking curve of 0.46° (27.6 arcmin) when compared with other samples and previous reports. We found that the AlN sample grown under low Al-flux has produced a good structural quality and low compressive strain value compared to the sample grown under high Al-fluxes.
Description: Full text article available in ScienceDirect
URI: http://www.sciencedirect.com/science/article/pii/S0749603613003534
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