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DC Field | Value | Language |
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dc.contributor.author | M.Z. Mohd Yusoff | - |
dc.contributor.author | Azzafeerah Mahyuddin | - |
dc.contributor.author | Z. Hassan | - |
dc.contributor.author | H. Abu Hassan | - |
dc.contributor.author | M.J. Abdullah | - |
dc.contributor.author | UniKL MIAT | - |
dc.date.accessioned | 2014-08-05T04:03:35Z | - |
dc.date.available | 2014-08-05T04:03:35Z | - |
dc.date.issued | 2013-12 | - |
dc.identifier.citation | Mohd Yusoff, M. Z., Mahyuddin, A., Hassan, Z., Abu Hassan, H., & Abdullah, M. J. (2013). Influence of Al-flux on the growth of AlN/GaN/AlN films on Si (111) substrate by MBE. Superlattices and Microstructures, 64, 367–374. doi:10.1016/j.spmi.2013.10.016 | en_US |
dc.identifier.uri | http://www.sciencedirect.com/science/article/pii/S0749603613003534 | - |
dc.identifier.uri | http://localhost/xmlui/handle/123456789/7382 | - |
dc.description | Full text article available in ScienceDirect | en_US |
dc.description.abstract | The effect of the Al flux on the crystal quality of AlN/GaN/AlN heterostructures grown on Si (1 1 1) substrates by solid source molecular beam epitaxy, using a 13.56 MHz RF nitrogen source, was investigated. The thickness of 69.94 nm is obtained for good growth conditions giving the comparable FWHM of the XRD-rocking curve of 0.46° (27.6 arcmin) when compared with other samples and previous reports. We found that the AlN sample grown under low Al-flux has produced a good structural quality and low compressive strain value compared to the sample grown under high Al-fluxes. | en_US |
dc.publisher | Elsevier | en_US |
dc.relation.ispartofseries | Superlattices and Microstructures; | - |
dc.subject | AlN | en_US |
dc.subject | MBE | en_US |
dc.subject | XRD | en_US |
dc.subject | III-Nitride | en_US |
dc.subject | Silicon | en_US |
dc.title | Influence of Al-flux on the growth of AlN/GaN/AlN films on Si (1 1 1) substrate by MBE | en_US |
Appears in Collections: | Journal Articles |
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Influence of Al-flux on the growth of AIN.jpg | 86.78 kB | JPEG | View/Open |
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