Abstract:
In this modern technology era, the usage of smartphones are important
for human’s life due to their multifunction purposes. For instance, wifi,
Bluetooth, GPS are now being integrated in mobile phone to send email, text
and voice messages. These applications operate in different frequency
spectrums. Hence, the switches are important to ensure smooth transition
between these frequencies. Traditionally, the basic switch circuit consists of
either diodes or FETs. In this project, pseudomorphic high electron mobility
transistors (pHEMTs) are used to design the switches. pHEMT is a part of
FETs family with the advantage of high switching capability. The analysis
started with a performance comparison between pHEMT and p-i-n diode. The
results showed that pHEMT switches produced better performance in term of
isolation and insertion loss. Further analyses are done using pHEMT
configuration where several parameters such as series/parallel configuration,
gate fingers and gate widths are varied. The performance of the switches can
be improved by increasing the number of gate widths and gate fingers.
However, the performance of the switches for series and parallel switches
configurations depend on their circuit arrangements either in combination or
multistage circuits. Finally, the optimized designs of both SPST and SPDT
switches are compared with the existing research.
