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http://hdl.handle.net/123456789/27878
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DC Field | Value | Language |
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dc.contributor.author | Rockett, Thomas B.O. | - |
dc.contributor.author | Nada A. Adham | - |
dc.contributor.author | Faezah Harun | - |
dc.contributor.author | David, John P.R. | - |
dc.contributor.author | Richards, Robert D. | - |
dc.contributor.author | UniKL BMI | - |
dc.date.accessioned | 2023-05-30T03:28:13Z | - |
dc.date.available | 2023-05-30T03:28:13Z | - |
dc.date.issued | 2023-05-30 | - |
dc.identifier.uri | http://hdl.handle.net/123456789/27878 | - |
dc.description | This article in indexed by Scopus | en_US |
dc.description.abstract | In this work, we demonstrate the MBE growth of a systematic series of GaAsBi/GaAs multiple quantum well devices with up to 120 periods and report on their structural and optical characterisation. TEM images confirm the incorporation of a record number of wells for this material, while showing reasonable thickness uniformity. Fitting of the XRD data becomes worse as the number of quantum wells increases due to strain relaxation and out-of-plane growth inhomogeneity. The devices are compared to a previous series of devices grown in our group using PL and are found to have less severe strain relaxation due to the thicker barriers and lower average strain in the MQW stack, despite containing a greater number of wells. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | A1.X-ray diffraction | en_US |
dc.subject | A3.Molecular beam epitaxy | en_US |
dc.subject | B1.Bismuth compounds | en_US |
dc.subject | B2.Semiconducting III-V materials | en_US |
dc.subject | B3.Solar cells | en_US |
dc.title | Growth of GaAsBi/GaAs multiple quantum wells with up to 120 periods | en_US |
dc.type | Article | en_US |
dc.conference.name | Journal of Crystal Growth, Volume 589, 1 July 2022, Article number 126679 | en_US |
dc.conference.year | 2022 | en_US |
Appears in Collections: | Conference Paper |
Files in This Item:
File | Description | Size | Format | |
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Growth of GaAsBiGaAs multiple quantum wells with up to 120 periods.pdf | 1.41 MB | Adobe PDF | View/Open Request a copy |
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