Influence of Al-flux on the growth of AlN/GaN/AlN films on Si (1 1 1) substrate by MBE

Please use this identifier to cite or link to this item: http://hdl.handle.net/123456789/7382

Title:	Influence of Al-flux on the growth of AlN/GaN/AlN films on Si (1 1 1) substrate by MBE
Authors:	M.Z. Mohd Yusoff Azzafeerah Mahyuddin Z. Hassan H. Abu Hassan M.J. Abdullah UniKL MIAT
Keywords:	AlN MBE XRD III-Nitride Silicon
Issue Date:	Dec-2013
Publisher:	Elsevier
Citation:	Mohd Yusoff, M. Z., Mahyuddin, A., Hassan, Z., Abu Hassan, H., & Abdullah, M. J. (2013). Influence of Al-flux on the growth of AlN/GaN/AlN films on Si (111) substrate by MBE. Superlattices and Microstructures, 64, 367–374. doi:10.1016/j.spmi.2013.10.016
Series/Report no.:	Superlattices and Microstructures;
Abstract:	The effect of the Al flux on the crystal quality of AlN/GaN/AlN heterostructures grown on Si (1 1 1) substrates by solid source molecular beam epitaxy, using a 13.56 MHz RF nitrogen source, was investigated. The thickness of 69.94 nm is obtained for good growth conditions giving the comparable FWHM of the XRD-rocking curve of 0.46° (27.6 arcmin) when compared with other samples and previous reports. We found that the AlN sample grown under low Al-flux has produced a good structural quality and low compressive strain value compared to the sample grown under high Al-fluxes.
Description:	Full text article available in ScienceDirect
URI:	http://www.sciencedirect.com/science/article/pii/S0749603613003534 http://localhost/xmlui/handle/123456789/7382
Appears in Collections:	Journal Articles

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