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DC Field | Value | Language |
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dc.contributor.author | M.Z. Mohd Yusoff | - |
dc.contributor.author | Azzafeerah Mahyuddin | - |
dc.contributor.author | Z. Hassan | - |
dc.contributor.author | Y. Yusof | - |
dc.contributor.author | M.A. Ahmad | - |
dc.contributor.author | C.W. Chin | - |
dc.contributor.author | H. Abu Hassan | - |
dc.contributor.author | M.J. Abdullah | - |
dc.contributor.author | (UniKL MIAT) | - |
dc.date.accessioned | 2014-08-05T03:45:19Z | - |
dc.date.available | 2014-08-05T03:45:19Z | - |
dc.date.issued | 2013-08 | - |
dc.identifier.citation | Mohd Yusoff, M. Z., Mahyuddin, A., Hassan, Z., Yusof, Y., Ahmad, M. A., Chin, C. W., … Abdullah, M. J. (2013). Plasma-assisted MBE growth of AlN/GaN/AlN heterostructures on Si (111) substrate. Superlattices and Microstructures, 60, 500–507. doi:10.1016/j.spmi.2013.05.034 | en_US |
dc.identifier.uri | http://www.sciencedirect.com/science/article/pii/S0749603613001730 | - |
dc.identifier.uri | http://www.academia.edu/4275573/Plasma_assisted_MBEgrowthof_Al_NGa_NAl_Nheterostructures_on_Si111substrate | - |
dc.identifier.uri | http://localhost/xmlui/handle/123456789/7381 | - |
dc.description | Full text article available in ScienceDirect.ScienceDirect is accessible through UniKL Library Website | en_US |
dc.description.abstract | The microstructure properties of AlN/GaN/AlN heterostructures on Si (1 1 1) substrate grown by plasma-assisted molecular beam epitaxy (MBE) have been studied and investigated. Reflection high energy electron diffraction (RHEED), high-resolution X-ray diffraction (HR-XRD), transmission electron microscopy (TEM), and energy dispersive X-ray spectroscopy (EDS) analysis were used to investigate a reconstruction pattern, cross section, and crystalline quality of the AlN/GaN/AlN heterostructures on Si (1 1 1) susbstrate. The reflection high energy electron diffraction images indicated a good surface morphology of AlN/GaN/AlN heterostructures on Si (1 1 1) substrate. The full width at half maximum (FWHM) obtained from XRD measurement was 0.46° (27.6 arcmin), indicating a good quality layer of sample. From TEM measurements, it is found that the crystalline quality of the AlN/GaN/AlN heterostructures is good comparable with previous report. | en_US |
dc.publisher | Elsevier | en_US |
dc.relation.ispartofseries | Superlattices and Microstructures; | - |
dc.subject | AlN | en_US |
dc.subject | XRD | en_US |
dc.subject | TEM | en_US |
dc.subject | EDS line analysis | en_US |
dc.title | Plasma-assisted MBE growth of AlN/GaN/AlNheterostructures on Si (111) substrate | en_US |
Appears in Collections: | Journal Articles |
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