Please use this identifier to cite or link to this item:
http://hdl.handle.net/123456789/16628
Title: | Design And Analysis Of Compact MMIC Switches Utilising GaAs pHEMTs In 3D Multilayer Technology |
Authors: | Norshakila Haris, Peter B K Kyabaggu Mohammad A Alim, Ali A Rezazadeh |
Keywords: | GaAs MMIC pHEMT SPDT SPST switch |
Issue Date: | 5-Oct-2017 |
Abstract: | In this paper, we demonstrate for the first time the implementation of three-dimensional multilayer technology on GaAs-based pseudomorphic high electron mobility transistor (pHEMT) switches. Two types of pHEMT switches are considered, namely single-pole single-throw (SPST) and single-pole double-throw (SPDT). The design and analysis of the devices are demonstrated first through a simulation of the industry-recognised standard model, TriQuint's Own Model - Level 3, developed by TriQuint Semiconductor, Inc. From the simulation analysis, three optimised SPST and SPDT pHEMT switches which can address applications ranging from L to X bands, are fabricated and tested. The performance of the pHEMT switches using multilayer technology are comparable to those of the current state-of-the-art pHEMT switches, while simultaneously offering compact circuits with the advantages of integration with other MMIC components. © 2017 IOP Publishing Ltd. |
URI: | 10.1088/1361-6641/aa681b http://ir.unikl.edu.my/jspui/handle/123456789/16628 |
ISSN: | 02681242 |
Appears in Collections: | Journal Articles |
Files in This Item:
File | Description | Size | Format | |
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Design and analysis of compact MMIC switches utilising GaAs pHEMTs in 3D multilayer technology.pdf | 7.5 kB | Adobe PDF | View/Open |
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