Influence of Al-flux on the growth of AlN/GaN/AlN films on Si (1 1 1) substrate by MBE

M.Z. Mohd Yusoff; Azzafeerah Mahyuddin; Z. Hassan; H. Abu Hassan; M.J. Abdullah; UniKL MIAT

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dc.contributor.author	M.Z. Mohd Yusoff
dc.contributor.author	Azzafeerah Mahyuddin
dc.contributor.author	Z. Hassan
dc.contributor.author	H. Abu Hassan
dc.contributor.author	M.J. Abdullah
dc.contributor.author	UniKL MIAT
dc.date.accessioned	2014-08-05T04:03:35Z
dc.date.available	2014-08-05T04:03:35Z
dc.date.issued	2013-12
dc.identifier.citation	Mohd Yusoff, M. Z., Mahyuddin, A., Hassan, Z., Abu Hassan, H., & Abdullah, M. J. (2013). Influence of Al-flux on the growth of AlN/GaN/AlN films on Si (111) substrate by MBE. Superlattices and Microstructures, 64, 367–374. doi:10.1016/j.spmi.2013.10.016	en_US
dc.identifier.uri	http://www.sciencedirect.com/science/article/pii/S0749603613003534
dc.identifier.uri	http://localhost/xmlui/handle/123456789/7382
dc.description	Full text article available in ScienceDirect	en_US
dc.description.abstract	The effect of the Al flux on the crystal quality of AlN/GaN/AlN heterostructures grown on Si (1 1 1) substrates by solid source molecular beam epitaxy, using a 13.56 MHz RF nitrogen source, was investigated. The thickness of 69.94 nm is obtained for good growth conditions giving the comparable FWHM of the XRD-rocking curve of 0.46° (27.6 arcmin) when compared with other samples and previous reports. We found that the AlN sample grown under low Al-flux has produced a good structural quality and low compressive strain value compared to the sample grown under high Al-fluxes.	en_US
dc.publisher	Elsevier	en_US
dc.relation.ispartofseries	Superlattices and Microstructures;
dc.subject	AlN	en_US
dc.subject	MBE	en_US
dc.subject	XRD	en_US
dc.subject	III-Nitride	en_US
dc.subject	Silicon	en_US
dc.title	Influence of Al-flux on the growth of AlN/GaN/AlN films on Si (1 1 1) substrate by MBE	en_US