Plasma-assisted MBE growth of AlN/GaN/AlNheterostructures on Si (111) substrate

Abstract

The microstructure properties of AlN/GaN/AlN heterostructures on Si (1 1 1) substrate grown by plasma-assisted molecular beam epitaxy (MBE) have been studied and investigated. Reflection high energy electron diffraction (RHEED), high-resolution X-ray diffraction (HR-XRD), transmission electron microscopy (TEM), and energy dispersive X-ray spectroscopy (EDS) analysis were used to investigate a reconstruction pattern, cross section, and crystalline quality of the AlN/GaN/AlN heterostructures on Si (1 1 1) susbstrate. The reflection high energy electron diffraction images indicated a good surface morphology of AlN/GaN/AlN heterostructures on Si (1 1 1) substrate. The full width at half maximum (FWHM) obtained from XRD measurement was 0.46° (27.6 arcmin), indicating a good quality layer of sample. From TEM measurements, it is found that the crystalline quality of the AlN/GaN/AlN heterostructures is good comparable with previous report.