M.Z. Mohd Yusoff; Azzafeerah Mahyuddin; Z. Hassan; H. Abu Hassan; M.J. Abdullah; UniKL MIAT
(Elsevier, 2013-12)
The effect of the Al flux on the crystal quality of AlN/GaN/AlN heterostructures grown on Si (1 1 1) substrates by solid source molecular beam epitaxy, using a 13.56 MHz RF nitrogen source, was investigated. The thickness ...